Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon

Scalable silicon nanowire photodetectors

This paper presents photodetectors having vertically stacked electrodes with sub-micron ( 300 nm) separation based on silicon nanowire (SiNW) nanocomposites. The thin-film-like devices are made using standard photolithography instead of electron beam lithography and thus are amenable to scalable low-cost manufacturing. The processing technique is not limited to SiNWs and can be extended to diff...

Diameter Dependent Photocurrent in Infrared InAsSb Nanowire Photodetectors

Nanowire photodetectors.

The use of nanowires and nanowire structures as photodetectors is an emerging research topic. Despite the large amount of reports on nanowire photoresponse that appeared in the literature over the last decade, the mechanism leading to high photosensitivity and photoconductive gain in high aspect ratio nanostructures has been elucidated only recently. Novel device architectures integrated in sin...

Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are ...

Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon

Vertical III-V nanowires are capable of resonant absorption at specificwavelengths by tuning the nanowire diameter, thereby exceeding the absorption of equivalent thinfilms. These propertiesmay be exploited to fabricatemultispectral infrared (IR) photodetectors, directly integratedwith Si, without the need for spectral filters or vertical stacking of heterostructures as required in thinfilm dev...